Samsung has declared the completion of its DDR4 DRAM module which uses the 30nm class process technology. Claiming to be industry’s first, this module is capable of 2.133 gigabits per second data transfer rates at 1.2V on comparing with 1.35V and 1.5V DDR3 DRAM using equivalent 30nm-class technology.
It allows low power consumption by 40 percent when applied to a notebook. Using the Pseudo Open Drain (POD) technology, the module allows DDR4 DRAM to consume half the electric current while reading or writing. With new circuit architecture, the Samsung DDR4 runs from 1.6 up to 3.2Gbps.
“Samsung has been actively supporting the IT industry with our green memory initiative by coming up with eco-friendly, innovative memory products providing higher performance and power efficiency every year,” said Dong Soo Jun, president, memory division, Samsung Electronics. “The new DDR4 DRAM will build even greater confidence in our cutting-edge green memory, particularly when we introduce four-gigabit (Gb) DDR4-based products using next generation process technology for mainstream application.”
After delivering 1.2V 2 gigabyte (2GB) DDR4 unbuffered dual in-line memory modules for testing to a controller maker, Samsung decides to further strengthen its position. The company plans to work with several server makers for completing the JEDEC standardization of DDR4 technologies during the latter half of the year.