The advancement of popular consumer electronic and computing devices has certainly led to users storing more data, photos and songs. All this in a more cost-effective manner would be more than appreciated. Intel partners with Micron to do just that. Yes, the two companies revealed the 25-nanometer (nm) NAND which they claim to be the smallest and most advanced process technology in the semiconductor industry.
Apparently the first 25nm process technology in the world, the novel 25nm flash has been tailored to offer more price conscious storage options. It should augment the cost-effectiveness of storage for various devices like portable music/media players, smartphones and solid-state drives. In a single NAND device, the 25nm process can seemingly produce 8GB of storage.
Proffering a high-capacity storage solution for consumer gadgets, users are assured information is retained even when the power is turned off. With this NAND flash memory, storing data and other media could just be more convenient. Besides being the smallest NAND technology, this new offering also claims to be the smallest semiconductor technology in the world.
“To lead the entire semiconductor industry with the most advanced process technology is a phenomenal feat for Intel and Micron, and we look forward to further pushing the scaling limits,” mentioned Brian Shirley, vice president of Micron’s memory group. “This production technology will enable significant benefits to our customers through higher density media solutions.”
“Through our continued investment in IMFT, we’re delivering leadership technology and manufacturing that enable the most cost-effective and reliable NAND memory,” remarked Tom Rampone, vice president and general manager, Intel NAND Solutions Group. “This will help speed the adoption of solid-state drive solutions for computing.”
Capable of creating a high-capacity storage solution for advanced consumer gadgets, Intel and Micron’s NAND flash joint venture has been manufactured by IM Flash Technologies (IMFT). Small enough to pass through the hole in the middle of a CD, it measures just 167mm2. Inspite of its diminutive size, it claims to pack in over 10 times the data capacity of that CD.
The device supposedly offers the highest-density in a single 2 bits-per-cell MLC die that should fit an industry-standard, thin small-outline package (TSOP) for consumer electronics manufacturers. To augment the storage capacity, multiple 8GB devices can be stacked in a package. Lowering chip count by 50 percent as against earlier process generations, the new 25nm 8GB device enables smaller, yet higher density designs and greater cost efficiencies.
Sampling now, the 25nm, 8GB device is slated to enter mass production in the second quarter of 2010.