Tech Shout!

IBM today revealed a new on-chip memory technology that features the fastest access times ever recorded in eDRAM (embedded dynamic random access memory).

This new IBM technology was designed using IBM’s Silicon-on-Insulator (SOI) for high-performance at low power, greatly improves microprocessor performance in multi-core designs and speeds the movement of graphics in gaming, networking, and other image intensive, multi-media applications.

The new IBM technology is expected to be the main feature of IBM’s 45nm (nanometer) microprocessor roadmap and will become available in early 2008.

IBM’s new eDRAM technology, designed in stress-enabled 65nm SOI using deep trench, dramatically improves on-processor memory performance in about one-third the space with one-fifth the standby power of conventional SRAM (static random access memory).

Dr. Subramanian Iyer, Distinguished Engineer and director of 45 nm technology development at IBM said, “With this breakthrough solution to the processor/memory gap, IBM is effectively doubling microprocessor performance beyond what classical scaling alone can achieve.”

Iyer added “As semiconductor components have reached the atomic scale, design innovation at the chip-level has replaced materials science as a key factor in continuing Moore’s Law. Today’s announcement further demonstrates IBM’s leadership in this critical area of microprocessor design innovation.”